B.S. in Chemical Biology, Tsinghua University, China (2015)
Areas of Interest
First-principles simulation of defects in semiconductors for quantum information processing, including development of methods to simulate the electronic structure and spin Hamiltonian of defects, theoretical interpretation of relevant experimental observations and exploration of novel defects
Development of density functional theory and many-body perturbation theory
2015-present, Graduate Student, University of Chicago.
2014 summer, Visiting Student, University of Minnesota, Prof. Donald G. Truhlar's Group: computational kinetics study of small molecule reactions
2011-2015, Undergraduate Researcher, Tsinghua University, Prof. Zhigang Shuai's Group: first principle simulation of charge transport processes in organic semiconductors; development of excited state density matrix renormalization group algorithm.
Rubén Meana-Pañeda, Xuefei Xu, He Ma, Donald G. Truhlar
Computational kinetics by variational transition state theory with semiclassical multidimensional tunneling: direct dynamics rate constants for the abstraction of H from CH3OH by triplet oxygen atoms J. Phys. Chem. A. 121(8), 1693-1707 (2017)
Hosung Seo, He Ma, Marco Govoni, and Giulia Galli
Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies Phys. Rev. Mat. 1, 075002 (2017)