Dr. Shenli Zhang
The University of Chicago
Pritzker School of Molecular Engineering
5640 South Ellis Avenue
Chicago, IL 60637
Phone: (773) 834-7392
Email: shlzhang at uchicago edu
Postdoctoral Research Scholar
Education
- Ph.D. Materials Science and Engineering, University of California, Davis (2018)
- M.S. Optical Engineering, Shanghai Jiao Tong University (SJTU), China (2014)
- General Engineering Diploma, 4+4 Dual Degree Program, Ecole Centrale de Lyon, France (2011)
- B.S. Applied Physics, Shanghai Jiao Tong University, China (2011)
Professional Affiliations
- Materials Research Society (MRS)
- American Institute for Chemical Engineers (AIChE)
- Material Advantage (ACers, AIST, ASM and TMS)
Areas of Interest
- Dopants/vacancy in oxide materials
- Interfaces/surfaces phenomena
- Materials thermal stability
Experience
- 2016-2018: Teaching Assistant, Dept. of Materials Science and Dept. of Chemical Engineering, UC Davis
- 2014-2018: Graduate Researcher, Dept. of Materials Science and Dept. of Chemical Engineering, UC Davis
- 2017: Summer Intern, CCMS Institute, Lawrence Livermore National Laboratory
Publications
- S. Zhang, I-T. Chiu, M.-H. Lee, B. Gunn, M. Feng, T. J. Park, P. Shafer, A. T N'Diaye, F. Rodolakis, S. Ramanathan, A. Frano, I. K Schuller, Y. Takamura, and G. Galli
Determine the oxygen stoichiometry of cobaltite thin films
Chem. Mater. 34(5), 2076-2084 (2022)
- H. Vo, S. Zhang, Wennie Wang, and G. Galli
Lessons Learned from First-Principles Calculations of Transition Metal Oxides
J. Chem. Phys. 154, 174704 (2021)
- S. Zhang, H. Vo and G. Galli
Predicting the onset of metal-insulator transitions in transition metal oxides—a first step to design neuromorphic devices
Chem. Mater. 33, 9, 3187–3195 (2021)
- S. Zhang and G. Galli
Toward materials for neuromorphic computing: understanding the metal-to-insulator transition in La1-xSrxCoO3−δ
Npj Comput. Mater. 6, 170 (2020)
- A. Lindberg, W. Wang, S. Zhang, G. Galli and K. Choi
Can a PbCrO4 Photoanode Perform as Well as Isoelectronic BiVO4?
ACS Appl. Energy Mater. 3 (9), 8658-8666, (2020)
- S. Zhang, Y. Huang, G. Tetiker, S. Sriraman, A. Paterson, and R. Faller
Computational Modelling of Atomic Layer Etching of Chlorinated Germanium Surfaces by Argon
Phys. Chem. Chem. Phys. 21 (11) 5898-5902 (2019)
- S. Zhang, H. Sha, R. Castro and R. Faller
Atomistic modeling of La3+ doping segregation effect on nanocrystalline yttria-stabilized zirconia
Phys. Chem. Chem. Phys. 20, 13215 (2018)
- A. Bokov, S. Zhang, S. J. Dillon, L. Feng, R. Faller and R. Castro
Energetic design of grain boundary networks for toughening of nanocrystalline oxides
J. Eur. Ceram. Soc. 38, 4260 (2018)
- S. Zhang, E. Yu, S. Gates, W. Cassata, J. Makel, A. M. Thron, C. Bartel, A. W. Weimer, R. Faller, P. Stroeve and J. Tringe
Helium interactions with alumina formed by atomic layer deposition show potential for mitigating problems with excess helium in spent nuclear fuel
Journal of Nuclear Materials, 499, 301 (2018)
- S. Zhang, H. Sha, E. Yu, M. P. Page, R. Castro, P. Stroeve, J. Tringe and R. Faller
Computational and experimental studies on novel materials for fission gas capture
Proceedings of the 18th International Conference on Environmental Degradation of Materials in Nuclear Power Systems & Water Reactors (pp. 1039-1050). Springer, Cham (2018)
- S. Zhang, M. Perez-Page, K. Guan, E. Yu, J. Tringe, R. Castro, R. Faller and P. Stroeve
Response to Extreme Temperatures of Mesoporous Silica MCM-41: Porous Structure Transformation Simulation and Modification of Gas Adsorption Properties
Langmuir, 32, 11422 (2016)
- P. Yang, L. Zhou, S. Zhang, N. Wan, W. Pan, W. Shen
Facile synthesis and photoluminescence mechanism of graphene quantum dots
Journal of Applied Physics, 116, 244306 (2014)
- S. Zhang, X. Wang, H. Liu and W. Shen
Controllable light-induced conic structures in silicon nanowire arrays by metal-assisted chemical etching
Nanotechnology, 25, 025602 (2014)