Dr. Shenli Zhang

Former Postdoctoral Research Scholar

Education

• Ph.D. Materials Science and Engineering, University of California, Davis (2018)
• M.S. Optical Engineering, Shanghai Jiao Tong University (SJTU), China (2014)
• General Engineering Diploma, 4+4 Dual Degree Program, Ecole Centrale de Lyon, France (2011)
• B.S. Applied Physics, Shanghai Jiao Tong University, China (2011)

Professional Affiliations

• Materials Research Society (MRS)
• American Institute for Chemical Engineers (AIChE)
• Material Advantage (ACers, AIST, ASM and TMS)

Areas of Interest

• Dopants/vacancy in oxide materials
• Interfaces/surfaces phenomena
• Materials thermal stability

Experience

• 2016-2018: Teaching Assistant, Dept. of Materials Science and Dept. of Chemical Engineering, UC Davis
• 2014-2018: Graduate Researcher, Dept. of Materials Science and Dept. of Chemical Engineering, UC Davis
• 2017: Summer Intern, CCMS Institute, Lawrence Livermore National Laboratory

Publications

• S. Zhang, I-T. Chiu, M.-H. Lee, B. Gunn, M. Feng, T. J. Park, P. Shafer, A. T N'Diaye, F. Rodolakis, S. Ramanathan, A. Frano, I. K Schuller, Y. Takamura, and G. Galli
  Determine the oxygen stoichiometry of cobaltite thin films
  Chem. Mater. 34(5), 2076-2084 (2022)
• H. Vo, S. Zhang, Wennie Wang, and G. Galli
  Lessons Learned from First-Principles Calculations of Transition Metal Oxides
  J. Chem. Phys. 154, 174704 (2021)
• S. Zhang, H. Vo and G. Galli
  Predicting the onset of metal-insulator transitions in transition metal oxides—a first step to design neuromorphic devices
  Chem. Mater. 33, 9, 3187–3195 (2021)
• S. Zhang and G. Galli
  Toward materials for neuromorphic computing: understanding the metal-to-insulator transition in La_1-xSr_xCoO_3−δ
  Npj Comput. Mater. 6, 170 (2020)
Featured in:

• UChicago PME News: UChicago scientists uncover secrets to designing brain-like devices
• DOE University and Stakeholder News
• A. Lindberg, W. Wang, S. Zhang, G. Galli and K. Choi
  Can a PbCrO₄ Photoanode Perform as Well as Isoelectronic BiVO₄?
  ACS Appl. Energy Mater. 3 (9), 8658-8666, (2020)
• S. Zhang, Y. Huang, G. Tetiker, S. Sriraman, A. Paterson, and R. Faller
  Computational Modelling of Atomic Layer Etching of Chlorinated Germanium Surfaces by Argon
  Phys. Chem. Chem. Phys. 21 (11) 5898-5902 (2019)
• S. Zhang, H. Sha, R. Castro and R. Faller
  Atomistic modeling of La³⁺ doping segregation effect on nanocrystalline yttria-stabilized zirconia
  Phys. Chem. Chem. Phys. 20, 13215 (2018)
• A. Bokov, S. Zhang, S. J. Dillon, L. Feng, R. Faller and R. Castro
  Energetic design of grain boundary networks for toughening of nanocrystalline oxides
  J. Eur. Ceram. Soc. 38, 4260 (2018)
• S. Zhang, E. Yu, S. Gates, W. Cassata, J. Makel, A. M. Thron, C. Bartel, A. W. Weimer, R. Faller, P. Stroeve and J. Tringe
  Helium interactions with alumina formed by atomic layer deposition show potential for mitigating problems with excess helium in spent nuclear fuel
  Journal of Nuclear Materials, 499, 301 (2018)
• S. Zhang, H. Sha, E. Yu, M. P. Page, R. Castro, P. Stroeve, J. Tringe and R. Faller
  Computational and experimental studies on novel materials for fission gas capture
  Proceedings of the 18th International Conference on Environmental Degradation of Materials in Nuclear Power Systems & Water Reactors (pp. 1039-1050). Springer, Cham (2018)
• S. Zhang, M. Perez-Page, K. Guan, E. Yu, J. Tringe, R. Castro, R. Faller and P. Stroeve
  Response to Extreme Temperatures of Mesoporous Silica MCM-41: Porous Structure Transformation Simulation and Modification of Gas Adsorption Properties
  Langmuir, 32, 11422 (2016)
• P. Yang, L. Zhou, S. Zhang, N. Wan, W. Pan, W. Shen
  Facile synthesis and photoluminescence mechanism of graphene quantum dots
  Journal of Applied Physics, 116, 244306 (2014)
• S. Zhang, X. Wang, H. Liu and W. Shen
  Controllable light-induced conic structures in silicon nanowire arrays by metal-assisted chemical etching
  Nanotechnology, 25, 025602 (2014)