Marco Govoni

Postdoctoral Research Scholar

Areas of Interest

• First-principles simulations of nanostructures, surface and interfaces
• Optical and excited state properties of materials
• Carrier recombination in semiconductors
• Casimir force/torque in micro- and nano-systems
• Development of HPC code for scientific research

Experience

• 2014 – present, Postdoctoral Researcher, Argonne National Lab & University of Chicago
• 2012 – 2013, Postdoctoral Researcher, University of California Davis
• 2012, Research Fellowship, CINECA & University of Modena and Reggio Emilia

Publications

• P. Scherpelz, M. Govoni, I. Hamada, and G. Galli
  Implementation and Validation of Fully-Relativistic GW Calculations: Spin-Orbit Coupling in Molecules, Nanocrystals and Solids
  J. Chem. Theory Comput. 12 (8), 3523-3544 (2016)
• J. Skone, M. Govoni, and G. Galli
  Nonempirical range-separated hybrid functionals for solids and molecules
  Phys. Rev. B 93, 235106 (2016)
• A. P. Gaiduk, M. Govoni, R. Seidel, J. Skone, B. Winter, and G. Galli
  Photoelectron spectra of aqueous solutions from first principles
  J. Am. Chem. Soc. Commun. 138, 6912 (2016)
• H. Seo, M. Govoni, and G. Galli
  Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies
  Sci. Rep. 6, 20803 (2016)
• I. Marri, M. Govoni, and S. Ossicini
  First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes
  Sol. Energ. Mat. Sol. C. 145, 162 (2016)
• I. Marri, M. Govoni, and S. Ossicini
  Carrier Multiplication in Isolated and Interacting Silicon Nanocrystals
  Nanotechnology and Photovoltaic Devices: Light Energy Harvesting with Group IV Nanostructures. 177 -202; Editors: J. Valenta and S. Mirabella (2015) [link]
• M. Govoni, and G. Galli
  Large scale GW calculations
  J. Chem. Theory Comput. 11, 2680 (2015) [pdf]
• I. Marri, M. Govoni, and S. Ossicini
  Carrier multiplication in silicon nanocrystals: ab-initio results
  Beilstein J. Nanotechnol. 6, 343 (2015)
• I. Marri, M. Govoni, and S. Ossicini
  Red-shifted carrier multiplication energy threshold and exciton recycling mechanisms in strongly interacting silicon nanocrystals
  J. Am. Chem. Soc. 136, 13257 (2014)
• J. H. Skone, M. Govoni, and G. Galli
  Self-consistent hybrid functional for condensed systems
  Phys. Rev. B 89, 195112 (2014)
• M. Govoni, I. Marri, and S. Ossicini
  Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics
  Nature Photonics 6, 672-679 (2012)
• M. Govoni, I. Marri, and S. Ossicini
  Auger recombination in Si and GaAs semiconductors: Ab initio results
  Phys. Rev. B 84, 075215 (2011)
• M. Govoni, A. Benassi, and C. Calandra
  Role of Surface States in the Casimir Force Between Semiconducting Films
  Proceedings of the Ninth Conference on Quantum Field Theory under the Influence of External Conditions (QFEXT09); Editors: KA. Milton, M. Bordag, World Scientific (2009) [link]